[19p-E13-1~17] Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-

[19p-E13-15] Annealing in N2-CO of AlN buffer layers on sapphire and MOVPE growth of AlN

Gou Nishio¹, Shuhei Suzuki¹, ^○Hideto Miyake¹, Kazumasa Hiramatsu¹, Hiroyuki Fukuyama², Yuki Tokumoto³, Yoichi Yamada⁴ (Mie Univ.¹, Tohoku Univ.², Tokyo Univ.³, Yamaguchi Univ.⁴)

Keywords:AlN,窒化物半導体,MOVPE