[19p-E8-1~21] 6.3 Oxide-based electronics

△ [19p-E8-8] Conduction mechanism of NiO-based resistive switching cells and new insight into the difference in resistance states

^○Tatsuya Iwata¹, Yusuke Nishi¹, Hiroki Sasakura¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

Keywords:抵抗変化メモリ,酸化ニッケル,電気伝導