[19p-E8-1~21] 6.3 Oxide-based electronics

△ [19p-E8-7] Electrical properties of IGZO-TFT with Al₂O₃ gate insulators by PE-ALD method

^○Kazunori Kurishima^1,2, Toshihide Nabatame^2,3, Maki Shimizu², Shinya Aikawa², Kazuhito Tsukagoshi², Akihiko Ohi², Toyohiro Chikyo², Atsushi Ogura¹ (Meiji Univ.¹, NIMS², JST-CREST³)

Keywords:IGZO