[13p-4C-1~9] Ge-CMOSはどこまで進んでいるのか

▲ [13p-4C-2] High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

〇Rui Zhang¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

キーワード：Ge CMOS Devices

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation