[14a-2W-1~11] 15.3 III-V-group epitaxial crystals

[14a-2W-11] Fabrication of (110)-oriented GaAs/AlGaAs quantum wells with high MBE growth rate for spin-controlled VCSELs

〇Satoshi Iba¹, Hidekazu Saito¹, Ken Watanabe², Yuzo Ohno², Shinji Yuasa¹ (1.AIST, 2.Univ. of Tsukuba)

Keywords:MBE,spin,VCSEL