The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[14a-2W-1~11] 15.3 III-V-group epitaxial crystals

Mon. Sep 14, 2015 9:15 AM - 12:15 PM 2W (234-2(North))

座長:間野 高明(物材機構)

11:45 AM - 12:00 PM

[14a-2W-10] MOMBE growth of strained InGaAsSb/InGaAsSb MQW structure on InP substrate

〇Manabu Mitsuhara1, Yoshitaka Ohiso1 (1.NTT Device Technology Labs)

Keywords:Semiconductor quantum wells,InGaAsSb,InP substrate