[14a-2W-1~11] 15.3 III-V-group epitaxial crystals

[14a-2W-9] Annealing effect of InGaAsN/GaAsSb quantum wells diodes on InP substrates

〇Yuichi Kawamura¹, Ikuya Shishido¹ (1.Osaka Pref. Univ.)

Keywords:compound semiconductor,molecular beam epitaxy

InGaAs/GaAsSb type II quantum well diodes grown on inP substrates are very attractive for mid-infrared wavelength light sources and detectors. Recently, we demonstrated that by introducing Nitrogen into InGaAs layer, longer emission can be ontained. In this report, I demonstrate that by annealing the diode, 3μm wavelength emission can be obtained.