[14a-2W-1~11] 15.3 III-V-group epitaxial crystals

[14a-2W-8] The effect of the GaSb buffer layer on GaAs grown by MBE on Ge(111) substrates

〇Yasutomo Kajikawa¹, Yibo Son¹, Hisataka Hayase¹, Kenta Ushirogouchi¹, Masahiro Irie¹ (1.Shimane Univ.)

Keywords:heteroepitaxy,rotational twin,X-ray diffraction measurement

It has been proved that rotational twin formation in GaAs grown by MBE on Ge(111) substrates can be suppressed by inserting a GaSb buffer layer.