[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

[11p-P2-14] Formation of Ohmic Contact for p-type 4H-SiC Surface using Laser Anneal System

〇YOSUKE NAKANISHI¹, HIROAKI OKABE¹, YU NAKAMURA¹, KENSUKE TAGUCHI¹, KAZUYUKI SUGAHARA¹, NOBUYUKI TOMITA¹, SATOSHI YAMAKAWA¹ (1.Mitsubishi Electric)

Keywords:Silicon carbide,Ohmic Contact,Laser Anneal