[14p-P7-1~2] 13.6 Semiconductor English Session

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

〇AMINE ELMOUTAOUAKIL¹、Takuya HOSHI¹、Hiroki SUGIYAMA¹、Hideaki MATSUZAKI¹ (1.NTT Device Technology Labs.)

キーワード：InAs, HEMT, III-V

InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well are known for their record high-speed performances, mainly due to their high electron mobility and saturation velocity. Along with scaling, double δ-doping in HEMTs is used to boost the operation speed. However, there are no quantitative reports comparing structures with both single- and double-doping layers. In this work, we report on the performance of the double-δ-doped (DD) HEMT in comparison to the single-δ-doped (SD) HEMT. SD and DD HEMTs with a 6-nm-thick InAs/In_0.8Ga_0.2As quantum well were investigated. For DD HEMT, equivalent f_T values to those of SD HEMT were obtained even with lower μ, and f_MAX shows higher value than that of SD HEMT. These results can be explained in part by the low g_D in DD HEMTs.