[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[15p-C302-14] Development of in-situ observation for expansion and shrinkage of stacking faults induced in 4H-SiC PiN diode under electronic excitations.

〇Mina Ryo^1,2, Takeshi Tawara^1,2, Masaki Miyazato^1,2, Takumi Fujimoto², Kensuke Takenaka^1,2, Masaaki Miyajima^1,2, Akihiro Otsuki², Hidekazu Tsuchida³, Tomohisa Kato¹ (1.AIST, 2.Fuji Electric, 3.CRIEPI)

Keywords:Silicon Carbide, Power Device