[6a-PA9-1~11] 13.3 Insulator technology

[6a-PA9-3] Effects of gate-electrode metals on the electrical properties of Al₂O₃/GeO₂/p-Ge MOS capacitor grown by REALD -2

〇(M1)Yu Nagahama¹, Daichi Yamada², Yohei Otani², Yukio Fukuda², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.Tokyo Univ. of Science)

Keywords:Ge-MIS, ALD, electrical properties

We have studied the effect of PMA treatment on Al₂O₃/GeO₂/p-Ge MOS capacitor made by RE-ALD. In this report, we have examined the influence of evaporation method of aluminum electrodes on C-V characteristics. As a result, no difference was found between the samples made by electron- beam (EB) evaporation and that by resistance-heated evaporation. This result means that the defect introduction by EB evaporation was not recognized, and reduction of the Al₂O₃ film by evaporated aluminum might appear independent of the evaporation methods.