[8a-C21-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [8a-C21-4] Thermal stability of heavily Sb-doped Ge_1−xSn_x epitaxial layers

〇Jihee Jeon¹, Akihiro Suzuki^1,2, Kouta Takahashi^1,2, Osamu Nakatsuka^1,3, Shigeaki Zaima³ (1.Grad. Sch. of Eng., Nagoya Univ.,, 2.Research Fellow of JSPS, 3.IMaSS, Nagoya Univ.)

Keywords:semiconductor, GeSn, heavily n-type doping