[14p-F201-1~14] 15.7 Crystal evaluation, impurities and crystal defects

[14p-F201-6] Quantification of Carbon in Si by Photoluminescence at Liquid Nitrogen Temperature after Luminescence Activation

〇Michio Tajima¹, Hirotatsu Kiuchi¹, Fumito Higuchi¹, Atsushi Ogura¹ (1.Meiji University)

Keywords:photoluminescence, impurity quantification, Si