[15a-513-1~8] 13.6 Semiconductor English Session

▲ [15a-513-2] Ferroelectricity of Zr-doped HfO₂ deposited by RF magnetron sputtering

〇(M2)Liao Jiajia^1,2、Peng Qiangxiang^1,2、Zhou Yichun²、Ohmi Shun-ichiro¹ (1.Tokyo Tech、2.Xiangtan Univ)

キーワード：ferroelectrics, Zr-doped HfO2, RF magnetron sputtering

HfO₂-based ferroelectric films have attracted much attention because of the compatibility with CMOS process and scalability. Most studies are focused on HfO₂ ferroelectric films deposited by ALD or MOCVD. However, it has a problem of contamination caused by the precursor. In this study, ferroelectricity of Zr-doped HfO₂ (HZO) deposited by RF magnetron sputtering was investigated.