[18p-PA5-1~28] 12.4 Organic light-emitting devices and organic transistors

[18p-PA5-19] Photo-irradiation effect of field-effect transistors using (NH₄)₂S treated PbS colloidal nano-dot films

〇Yumi Takeichi¹, Kazuyuki Uno¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

Keywords:PbS colloidal nano-dots, (NH4)2S treatment, field-effect transistors

In this study, field-effect transistors (FETs) ware fabricated using ligand-removed PbS colloidal nano-dot thin films treated with (NH₄)₂S methanol solution. We already reported that higher carrier mobility was obtained using ammonium sulfide solution of higher sulfur concentration. In this report, irradiating the channel of the FET with a LED light, we measured the electric characteristics, and investigated photo-irradiation effect. Due to the light irradiation, the drain current and the carrier mobility increased by about 3 times, and 1.6 times, respectively.