The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)

4:30 PM - 4:45 PM

[19p-CE-10] Evaluation of Electrical Properties of SiO2/p-GaN MOS Capacitors

〇Takahiro Yamada1, Daiki Terashima1, Mikito Nozaki1, Hisashi Yamada2, Tokio Takahashi2, Mitsuaki Shimizu2, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ., 2.AIST)

Keywords:p-GaN, MOS, Electrical properties