09:45 〜 10:00
▲ [20a-141-4] Effects of wet-POA with various conditions on 4H-SiC m-face MOS interface properties
キーワード：Silicon Carbide, MOS, wet oxidation
Wet oxidation of SiC often results in significantly different MOS interface properties from dry oxidation. For both Si-face and m-face, we have reported the reduction of MOS interface state density (Dit) by the combination of dry oxidation and wet-POA, but the impact of the selection of wet-POA conditions has not been clarified. In this research, we systematically investigated the effects of wet-POA with various conditions on m-face, focusing on Dit and bias stress instability.
In a conclusion, significant reduction of Dit was demonstrated on 4H-SiC m-face, by dry oxidation followed by wet-POA. The reduction of Dit was most pronounced for the wet-POA with a small O2 content in the ambience, whereas the Vfb stability under a positive gate bias was improved by suppressing O2 introduction to the wet-POA ambience.
In a conclusion, significant reduction of Dit was demonstrated on 4H-SiC m-face, by dry oxidation followed by wet-POA. The reduction of Dit was most pronounced for the wet-POA with a small O2 content in the ambience, whereas the Vfb stability under a positive gate bias was improved by suppressing O2 introduction to the wet-POA ambience.