[18p-PB1-1~84] 10 スピントロニクス・マグネティクス（ポスター）

▲ [18p-PB1-46] Spin-dependent Tunneling in the Plasma Oxidized Cr₂O₃ Barrier Magnetic Tunnel Junctions

〇Tomohiro Ichinose¹、Kelvin Elphick²、Atsufumi Hirohata²、Shigemi Mizukami^1,3,4 (1.AIMR, Tohoku Univ.、2.Univ. of York、3.CSIS, Tohoku Univ.、4.CSRN, Tohoku Univ.)

キーワード：magnetic tunnel junction, tunnel magnetoresistance, Cr2O3

There has been growing interest in the antiferromagnetic spintronics due to the high speed operation, no stray fields, and so on. The magnetic tunnel junctions (MTJs) with the Cr₂O₃ barrier would show the intriguing spin dependent transport phenomena such as magnetoresistance effects based on antiferromagnetic and/or magnetoelectric nature of the Cr₂O₃. However, it has not been addressed to the characterization of the ultrathin Cr₂O₃ films to date. In this work, the spin dependent transport properties in the MTJs with a Cr₂O₃ barrier were investigated.