[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[10a-Z04-2] Roles of Threading Dislocations in Breakdown Phenomena of Vertical p-n Junction Diodes

〇Hiroshi Ohta¹, Naomi Asai¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:GaN, p-n diode, threading dislocation

We have reported that increasing the threading dislocation density (TDD) increases the on-resistance and decreases the current of the p-n diodes. In this study, we investigated the relationship between dislocations and breakdown phenomena. As a result, the p-n diode destruction due to breakdown did not occur at the location of dislocation, and no correlation was found between dislocation density and breakdown voltage. This result is considered to suggest that threading dislocations do not affect destruction in terms of breakdown and breakdown voltage.