Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

Thu. Sep 10, 2020 9:30 AM - 12:00 PM Z04

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[10a-Z04-1] Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy

〇Kenji Shiojima¹, Roy Tanaka², Shinya Takashima², Katsunori Uno², Masaharu Edo² (1.Univ. of Fukui, 2.Fuji electric co.)

9:45 AM - 10:00 AM

[10a-Z04-2] Roles of Threading Dislocations in Breakdown Phenomena of Vertical p-n Junction Diodes

〇Hiroshi Ohta¹, Naomi Asai¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

10:00 AM - 10:15 AM

[10a-Z04-3] Recess Length Dependence of Electrical Characteristics of GaN Gated-Anode Diodes

〇Hidemasa Takahashi¹, Yuji Ando¹, Ryohei Yamaguchi³, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Naogya Univ. IMaSS, 3.Nagoya Institute of Technology)

10:15 AM - 10:30 AM

[10a-Z04-4] Two-dimensional characterization of Schottky contacts on InAlN-HEMTs structure by scanning internal photoemission microscopy

〇Masahiro Uchida^1,2, Yuto Kawasumi², Kazumi Nishimura¹, Noriyuki Watanabe², Kenji Shiojima² (1.NTT-AT, 2.Univ. of Fukui)

10:30 AM - 10:45 AM

[10a-Z04-5] Temperature Properties of AlN Schottky Barrier Diodes

〇Masanobu Hiroki¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

11:00 AM - 11:15 AM

[10a-Z04-6] Characterization of contactless photoelectrochemical-etched Ni/n-GaN Schottky contacts
--Comparison in different electrolytes--

〇(M2)Ryo Matsuda¹, Fumimasa Horikiri², Noboru Fukuhara², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

11:15 AM - 11:30 AM

△ [10a-Z04-7] Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction

〇(M2)Tomoya Aota¹, Akihiro Hayasaka¹, Isao Makabe², Seiki Yoshida², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo tech, 2.Sumitomo Electric)

11:30 AM - 11:45 AM

△ [10a-Z04-8] Defect-free Atomic Layer Etching of GaN with Neutral-Beam Etching

〇Takahiro Sawada¹, Daisuke Ohori^1,2,3, Kenta Sugawara⁴, Masaya Okada⁴, Daisuke Satou⁵, Hideyuki Kurihara⁵, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.NCTU, 4.Sumitomo Electric Industries, Ltd, 5.SHOWA DENKO K.K.)

11:45 AM - 12:00 PM

△ [10a-Z04-9] Study on p-GaN Dry-etching towards Fabrication of GaN-based HBTs

〇Takeru Kumabe¹, Yuto Ando¹, Hirotaka Watanabe², Atsushi Tanaka^2,3, Yoshio Honda², Manato Deki^1,4, Shugo Nitta², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

Session information

[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[10a-Z04-1] Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy

[10a-Z04-2] Roles of Threading Dislocations in Breakdown Phenomena of Vertical p-n Junction Diodes

[10a-Z04-3] Recess Length Dependence of Electrical Characteristics of GaN Gated-Anode Diodes

[10a-Z04-4] Two-dimensional characterization of Schottky contacts on InAlN-HEMTs structure by scanning internal photoemission microscopy

[10a-Z04-5] Temperature Properties of AlN Schottky Barrier Diodes

[10a-Z04-6] Characterization of contactless photoelectrochemical-etched Ni/n-GaN Schottky contacts
--Comparison in different electrolytes--

△ [10a-Z04-7] Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction

△ [10a-Z04-8] Defect-free Atomic Layer Etching of GaN with Neutral-Beam Etching

△ [10a-Z04-9] Study on p-GaN Dry-etching towards Fabrication of GaN-based HBTs

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Session information

[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[10a-Z04-1] Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy

[10a-Z04-2] Roles of Threading Dislocations in Breakdown Phenomena of Vertical p-n Junction Diodes

[10a-Z04-3] Recess Length Dependence of Electrical Characteristics of GaN Gated-Anode Diodes

[10a-Z04-4] Two-dimensional characterization of Schottky contacts on InAlN-HEMTs structure by scanning internal photoemission microscopy

[10a-Z04-5] Temperature Properties of AlN Schottky Barrier Diodes

[10a-Z04-6] Characterization of contactless photoelectrochemical-etched Ni/n-GaN Schottky contacts--Comparison in different electrolytes--

△ [10a-Z04-7] Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction

△ [10a-Z04-8] Defect-free Atomic Layer Etching of GaN with Neutral-Beam Etching

△ [10a-Z04-9] Study on p-GaN Dry-etching towards Fabrication of GaN-based HBTs

Authenticate

[10a-Z04-6] Characterization of contactless photoelectrochemical-etched Ni/n-GaN Schottky contacts
--Comparison in different electrolytes--