[15p-A201-1~15] 15.6 IV族系化合物（SiC）

▼ [15p-A201-4] Comparisons of band alignments and current conduction mechanisms between SiO₂/4H-SiC (0001) and (1-100) systems with NO-POA

〇(D)Taehyeon Kil¹、Atsushi Tamura¹、Masato Noborio²、Sumera Shimizu²、Koji Kita¹ (1.The Univ. of Tokyo、2.DENSO CORPORATION)

キーワード：4H-SiC, MOS capacitor, Leakage current

For Si-face 4H-SiC, the post-oxidation annealing in NO (NO-POA) is the most common method to reduce D_it. However, the effects of NO-POA on the current conduction mechanism has not been well studied, even though previous study revealed that POA has a significant impact on SiO₂/SiC band alignment. In addition, it would be also important to see the crystal orientation dependence of such NO-POA effects. In this work, we compared the effects of NO-POA on the band alignment and the leakage currents of 4H-SiC MOS capacitors fabricated on (0001) Si-face and (1-100) m-face.