Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)

Mitsuru Sometani(AIST), Munetaka Noguchi(Mitsubishi Electric)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [15p-A201-1] Characterization of lateral channeling from threshold voltages of SiC side-gate JFETs fabricated by ion implantation

〇Qimin Jin¹, Masashi Nakajima², Mitsuaki Kaneko², Tsunenobu Kimoto² (1.Kyoto Univ., 2.Dept. of Electron. Sci. & Eng., Kyoto Univ.)

1:15 PM - 1:30 PM

[15p-A201-2] First-Principles Study of Nitrogen Annealed SiC MOS structure

〇Mitsuharu Uemoto¹, Naoki Komatsu¹, Tomoya Ono¹ (1.Kobe Univ.)

1:30 PM - 1:45 PM

[15p-A201-3] Theoretical study for the effect of wet oxidants on the oxidation reactions at 4H-SiC/SiO₂ interface

〇Tsunashi Shimizu¹, Toru Akiyama¹, Pradipto Abdul Muizz¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

1:45 PM - 2:00 PM

▼ [15p-A201-4] Comparisons of band alignments and current conduction mechanisms between SiO₂/4H-SiC (0001) and (1-100) systems with NO-POA

〇(D)Taehyeon Kil¹, Atsushi Tamura¹, Masato Noborio², Sumera Shimizu², Koji Kita¹ (1.The Univ. of Tokyo, 2.DENSO CORPORATION)

2:00 PM - 2:15 PM

△ [15p-A201-5] Comparison between the stability of N-introduced 4H-SiC/SiO₂ interfaces formed on Si-face, C-face and a-face

〇Yusuke Samata¹, Koji Kita¹ (1.The Univ. of Tokyo)

2:15 PM - 2:30 PM

▼ [15p-A201-6] Mechanical-stress-induced anomalous change of electrical characteristics of 4H-SiC (0001) NMOSFET fabricated on Al-implanted p-type well

〇Qiao Chu¹, Adhi Dwi Hatmanto¹, Masahiro Masunaga², Akio Shima², Koji Kita¹ (1.The Univ. of Tokyo, 2.Hitachi, Ltd.)

2:30 PM - 2:45 PM

△ [15p-A201-7] Universal mobility of electrons in SiC(0001)/SiO₂ systems with phosphorus treatment

〇Koji Ito¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

2:45 PM - 3:00 PM

[15p-A201-8] Temperature Dependence of Inversion Layer Mobility of the Si-face SiC MOSFET Fabricated on Low Acceptor Concentration P-type Well Region

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Naruhisa Miura¹ (1.Mitsubishi Electric Corp., 2.Univ. of Tokyo)

3:15 PM - 3:30 PM

△ [15p-A201-9] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS(2)

〇Anna Hosaka¹, Kohei Yamasue¹, Judith Woerle^2,3, Gabriel Ferro⁴, Ulrike Grossner², Massimo Camarda^3,2, Yasuo Cho¹ (1.Tohoku Univ., 2.ETH Zurich., 3.Paul Scherrer Inst., 4.Lyon Univ.)

3:30 PM - 3:45 PM

△ [15p-A201-10] Availability of Al₂O₃/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Wakana Takeuchi^1,3, Mitsuo Sakashita¹, Noriyuki Taoka¹, Mitsuaki Shimizu², Osamu Nakatsuka¹ (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.Aichi Inst. of Tech.)

3:45 PM - 4:00 PM

△ [15p-A201-11] Consideration on the impact of O₂ partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics

〇Jun Koyanagi¹, Koji Kita¹ (1.The Univ. of Tokyo)

4:00 PM - 4:15 PM

△ [15p-A201-12] Different effects between NO-POA and H₂O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements

〇Rimpei Hasegawa¹, Koji Kita¹ (1.Univ. of Tokyo)

4:15 PM - 4:30 PM

[15p-A201-13] High-temperature characteristics of 4H-SiC(0001) pMOSFET fabricated with ultrahigh temperature processes and its application to CMOS

Kidist Moges¹, 〇Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

4:30 PM - 4:45 PM

[15p-A201-14] Consideration on the mechanisms of defect formation in oxides by the thermal oxidations in O₂ or H₂O ambient including a small amount of CO

〇(B)Hongbo Liu¹, Koji Kita¹ (1.Univ. of Tokyo)

4:45 PM - 5:00 PM

[15p-A201-15] Analysis of Interface Trap Generation during Negative Bias Stress in SiC MOSFETs by On-the-fly Charge Pumping Method

〇Dai Okamoto¹, Mitsuru Sometani², Hiroki Sakata¹, Xufang Zhang¹, Yuta Matsuya¹, Tetsuo Hatakeyama³, Mitsuo Okamoto², Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹ (1.U. Tsukuba, 2.AIST, 3.Toyama Pref. Univ.)

Session information

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-A201-1] Characterization of lateral channeling from threshold voltages of SiC side-gate JFETs fabricated by ion implantation

[15p-A201-2] First-Principles Study of Nitrogen Annealed SiC MOS structure

[15p-A201-3] Theoretical study for the effect of wet oxidants on the oxidation reactions at 4H-SiC/SiO₂ interface

▼ [15p-A201-4] Comparisons of band alignments and current conduction mechanisms between SiO₂/4H-SiC (0001) and (1-100) systems with NO-POA

△ [15p-A201-5] Comparison between the stability of N-introduced 4H-SiC/SiO₂ interfaces formed on Si-face, C-face and a-face

▼ [15p-A201-6] Mechanical-stress-induced anomalous change of electrical characteristics of 4H-SiC (0001) NMOSFET fabricated on Al-implanted p-type well

△ [15p-A201-7] Universal mobility of electrons in SiC(0001)/SiO₂ systems with phosphorus treatment

[15p-A201-8] Temperature Dependence of Inversion Layer Mobility of the Si-face SiC MOSFET Fabricated on Low Acceptor Concentration P-type Well Region

△ [15p-A201-9] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS(2)

△ [15p-A201-10] Availability of Al₂O₃/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

△ [15p-A201-11] Consideration on the impact of O₂ partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics

△ [15p-A201-12] Different effects between NO-POA and H₂O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements

[15p-A201-13] High-temperature characteristics of 4H-SiC(0001) pMOSFET fabricated with ultrahigh temperature processes and its application to CMOS

[15p-A201-14] Consideration on the mechanisms of defect formation in oxides by the thermal oxidations in O₂ or H₂O ambient including a small amount of CO

[15p-A201-15] Analysis of Interface Trap Generation during Negative Bias Stress in SiC MOSFETs by On-the-fly Charge Pumping Method

Authentication

Session information

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-A201-1] Characterization of lateral channeling from threshold voltages of SiC side-gate JFETs fabricated by ion implantation

[15p-A201-2] First-Principles Study of Nitrogen Annealed SiC MOS structure

[15p-A201-3] Theoretical study for the effect of wet oxidants on the oxidation reactions at 4H-SiC/SiO2 interface

▼ [15p-A201-4] Comparisons of band alignments and current conduction mechanisms between SiO2/4H-SiC (0001) and (1-100) systems with NO-POA

△ [15p-A201-5] Comparison between the stability of N-introduced 4H-SiC/SiO2 interfaces formed on Si-face, C-face and a-face

▼ [15p-A201-6] Mechanical-stress-induced anomalous change of electrical characteristics of 4H-SiC (0001) NMOSFET fabricated on Al-implanted p-type well

△ [15p-A201-7] Universal mobility of electrons in SiC(0001)/SiO2 systems with phosphorus treatment

[15p-A201-8] Temperature Dependence of Inversion Layer Mobility of the Si-face SiC MOSFET Fabricated on Low Acceptor Concentration P-type Well Region

△ [15p-A201-9] Observation of interface state density distribution in macrostepped SiO2/SiC using local-DLTS(2)

△ [15p-A201-10] Availability of Al2O3/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

△ [15p-A201-11] Consideration on the impact of O2 partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics

△ [15p-A201-12] Different effects between NO-POA and H2O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements

[15p-A201-13] High-temperature characteristics of 4H-SiC(0001) pMOSFET fabricated with ultrahigh temperature processes and its application to CMOS

[15p-A201-14] Consideration on the mechanisms of defect formation in oxides by the thermal oxidations in O2 or H2O ambient including a small amount of CO

[15p-A201-15] Analysis of Interface Trap Generation during Negative Bias Stress in SiC MOSFETs by On-the-fly Charge Pumping Method

Authentication

[15p-A201-3] Theoretical study for the effect of wet oxidants on the oxidation reactions at 4H-SiC/SiO₂ interface

▼ [15p-A201-4] Comparisons of band alignments and current conduction mechanisms between SiO₂/4H-SiC (0001) and (1-100) systems with NO-POA

△ [15p-A201-5] Comparison between the stability of N-introduced 4H-SiC/SiO₂ interfaces formed on Si-face, C-face and a-face

△ [15p-A201-7] Universal mobility of electrons in SiC(0001)/SiO₂ systems with phosphorus treatment

△ [15p-A201-9] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS(2)

△ [15p-A201-10] Availability of Al₂O₃/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

△ [15p-A201-11] Consideration on the impact of O₂ partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics

△ [15p-A201-12] Different effects between NO-POA and H₂O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements

[15p-A201-14] Consideration on the mechanisms of defect formation in oxides by the thermal oxidations in O₂ or H₂O ambient including a small amount of CO