AlGaN-based UV-B laser diode using GRIN-SCH structure

Shunya Tanaka; Kosuke Sato; Shinji Yasue; Yuya Ogino; Kazuki Yamada; Sayaka Ishizuka; Yuta Kawase; Shohei Teramura; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15p-A302-1~12] 15.4 III-V-group nitride crystals

Sun. Mar 15, 2020 1:45 PM - 5:00 PM A302 (6-302)

Narihito Okada(Yamaguchi Univ.), Hideaki Murotani(Tokuyama College)

4:15 PM - 4:30 PM

△ [15p-A302-10] AlGaN-based UV-B laser diode using GRIN-SCH structure

〇(M1)Shunya Tanaka¹, Kosuke Sato^1,2, Shinji Yasue¹, Yuya Ogino¹, Kazuki Yamada¹, Sayaka Ishizuka¹, Yuta Kawase¹, Shohei Teramura¹, Sho Iwayama^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,4, Hideto Miyake³ (1.Fac. Sci & Tec., Meijo Univ., 2.Asahi-Kasei Corp., 3.Graduate School of Regional Innovation Studies, Mie Univ., 4.Akasaki Research Center, Nagoya Univ.)

Keywords:semiconductor, UV-B, AlGaN