2:15 PM - 2:30 PM
△ [11p-N305-4] Analysis of Electronic States at SiC MOS Inteface Based on Empirical Pseudopotential Method
Keywords:semiconductor, SiC, MOS
Presentation information
Oral presentation
13 Semiconductors » 13.7 Compound and power devices, process technology and characterization
[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization
Sat. Sep 11, 2021 1:30 PM - 4:15 PM N305 (Oral)
Hiroshi Yano(Univ. of Tsukuba)