[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[11p-N305-7] Operating Characteristics of Full 4H-SiC Pixel Device under UV-Light Irradiation

〇Shin-Ichiro Kuroki¹, Kenta Nishigaito¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³ (1.RNBS, Hiroshima Univ., 2.QST, 3.AIST)

Keywords:Silicon Carbide, CMOS image sensor, radiation hardened devices

Harsh einvironment electronics, which can be operable in high radiation or high temperature enviornments, has been required. Especially, for the decommissioning of the Fukushima Daiichi nuclear power station, radiation-hardened image sensors have been required. In this work, we developped a full 4H-SiC pixel device for radiation hardened UV CMOS image sensor, and investigated operating characteristics of the devices under UV-light irradiation.