[21p-C105-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

▲ [21p-C105-8] Highly-asymmetric-strain (110) SiGe-on-insulator pMOSFETs with extremely-thin body channels down to 3.2 nm fabricated by using Ge condensation technique

〇CHIATSONG CHEN¹, Xueyang Han¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:SGOI, extremely-thin body, asymmetric strain