16:00 〜 16:15
▼ [22p-A307-10] Investigation of the etching process for Pt gate electrode on the ferroelectric property of 5 nm thick nondoped HfO2 thin films
キーワード：5 nm thick ferroelectric nondoped HfO2, Pt gate electrode, Wet etching process
Ferroelectric HfO2 is considered as a promising candidate for metal-ferroelectric-semiconductor field-effect-transistors (MFSFETs) due to its Si compatibility and scalability. Previously, we realized MFSFET with 5 nm thick nondoped HfO2 gate insulator and Pt gate electrode utilizing conventional gate-last process. However, wet etching process of Pt gate electrode utilizing aqua regia has an issue from the process damage point of view.
In this study, we investigated the etching process for Pt gate electrode utilizing field oxide on the ferroelectric property of 5 nm thick nondoped HfO2.The largest 2Pr of 3.9 µC/cm2 was observed in case of MFS diode with field oxide at Vmax-Vmin of 10 V. Furthermore, the field oxide was effective to reduce the Dit from 1.1×1012 cm-2eV-1 to 1.2×1011 cm-2eV-1 with decreasing the wet etching damage.
Therefore, the precise control of etching for Pt gate electrode is important to improve the memory characteristic of MFSFET.
In this study, we investigated the etching process for Pt gate electrode utilizing field oxide on the ferroelectric property of 5 nm thick nondoped HfO2.The largest 2Pr of 3.9 µC/cm2 was observed in case of MFS diode with field oxide at Vmax-Vmin of 10 V. Furthermore, the field oxide was effective to reduce the Dit from 1.1×1012 cm-2eV-1 to 1.2×1011 cm-2eV-1 with decreasing the wet etching damage.
Therefore, the precise control of etching for Pt gate electrode is important to improve the memory characteristic of MFSFET.