[15p-A404-1~19] 6.1 強誘電体薄膜

▲ [15p-A404-16] Investigation of development of stoichiometric LiNbO₃ recording media for SNDM probe memory

〇(P)Nana Sun¹、Kanamori Hiroaki²、Iizuka Takeshi²、Konishi Akio²、Yasuo Cho¹ (1.Tohoku Univ. NICHe、2.I-PEX Piezo Sol.)

キーワード：Ferroelectric data storage, SNDM, Stoichiometric LiNbO3 thin film

We are developing next-generation ultra-high-density data storage using ferroelectric materials based on scanning nonlinear dielectric microscopy (SNDM probe memory). As one approach for this purpose, it is desirable to develop novel, high quality and low-cost ferroelectric material. Stoichiometric 500 nm-thick LiNbO₃ thin films were prepared on Pt single crystal film/ZrO₂ single crystal film/Si substrates by sputtering. The film shows a clear hysteresis loop attributable to ferroelectricity. XRD pattern reveals that the film is a polycrystalline with a c-axis orientation. The polycrystalline structure is also confirmed by the SNDM measurement. Although this film is not enough to be used as a recording medium now, we plan to develop thinner and homogeneous single crystal films by improving the preparation technology in the future, so as to clarify the possibility of using them as the next generation of ultra-high density ferroelectric recording medium.