[17a-A403-1~10] 13.5 デバイス／配線／集積化技術

▲ [17a-A403-4] Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs

〇(D)Peilong Wang¹、Atsushi Hori¹、Iriya Muneta¹、Takamasa Kawanago¹、Kuniyuki Kakushima¹、Kazuo Tsutsui¹、Hitoshi Wakabayashi¹ (1.Tokyo Institute of Technology)

キーワード：Nano-sheet FETs, FBDI, PBDI