[17a-A403-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[17a-A403-5] Interpretation of universality of mobility against effective electric field and coefficient η based on nonlinear model of surface roughness scattering

〇(D)Kei Sumita¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:semiconductor, surface roughness scattering, universal mobiltiy

It is well known experimentally and theoretically by linear models of surface roughness (SR) scattering that the electron mobility of Si nMOSFETs with different impurity concentrations is universal for the effective electric field. On the other hand, we have previously proposed a model that considers the nonlinearity of SR scattering. However, the relationship between the mobility and the effective electric field is not clear in the scattering picture of the nonlinear model of SR scattering. In this study, we clarify the origin of the universality of the SR mobility of Si nMOSFETs.