[A-9] Imaging Sensors and Detectors

[A-9-02] Development of Test Element Group Methodology for Time-of-Flight CMOS Image sensor

〇Jungwook Lim¹, Seunghyun Lee¹, Sungyoung Seo¹ (1. Samsung Electronics Co., Ltd. (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-9-02

We developed and analyzed Test Element Group (TEG) module to model Full Well Capacity (FWC) and Dark Level (DL) of Indirect Time-of-Flight (iToF) pixel. To increase the depth accruacy of iToF sensor, high SNR is required and it is affected by FWC, DL, and so on. However, unlike the conventional Photodiode (PD) structure, it is difficult to estimate FWC and DL in iToF pixels because multiple devices including MOSCAP storage are connected in a chain structure. For this reason, a novel TEG suitable for this structure needs to be designed. In this paper, we analyzed FWC and DL of MOSCAP by measuring TEG module, which consists of electric potential, C-V curve, and charge pump.