2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-1] Ferroelectric Memory Materials

2022年9月27日(火) 11:30 〜 12:30 201 (2F)

Session Chair: Halid Mulaosmanovic (GlobalFoundries), Norikatsu Takaura (Hitachi, Ltd.)

11:45 〜 12:00

[F-1-02] Formation of ferroelectric ZrO2 film in ultra-thin region by sputtering method

〇Shigehisa Shibayama1, Jotaro Nagano1, Mitsuo Sakashita1, Osamu Nakatsuka1,2 (1. Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-1-02

We examined the formation of ultra-thin ferroelectric ZrO2 films on the TiN bottom electrode using a sputtering method in conjunction with post oxidation treatment. We found that high-temperature sputtering and post plasma oxidation at room temperature successfully forms ferroelectric ZrO2 films. Furthermore, we demonstrated the formation of ferroelectric ZrO2 in the ultra-thin region down to 6 nm. Finally, we discussed the possibility of further improvement of the ZrO2 ferroelectricity.

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