[S-IIIA-11] Integration of GaAs SISFET and GaAs Inversion-Base Bipolar Transistor Kazuhiko Matsumoto、Yutaka Hayashi、Takeshi Kojima、Toshiyuki Nagata、Tomomi Yoshimoto (1.Electrotechnical Laboratory MITI) https://doi.org/10.7567/SSDM.1988.S-IIIA-11
