InGaP/GaAs Sub-Square-Micron Emitter HBT with fmax＞100 GHz

Koji HIRATA; Tomonori TANOUE; Hiroshi MASUDA; Hiroyuki UCHIYAMA; Akihisa TERANO

doi:https://doi.org/10.7567/SSDM.1996.D-1-4

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜 1996年8月29日
Pacifico Yokohama, Yokohama, Japan

[D-1-4] InGaP/GaAs Sub-Square-Micron Emitter HBT with fmax＞100 GHz

Koji HIRATA、Tomonori TANOUE、Hiroshi MASUDA、Hiroyuki UCHIYAMA、Akihisa TERANO (1.Hitachi ULSI Engineering, Corp.、2.Central Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1996.D-1-4

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