[PC-3-1] High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices

T. Ukeda、T. Yamada、M. Yamanaka、C. Kudo、M. Segawa、M. Arai、M. Nishio、T. Yabu、T. Uehara、T. Nakabayashi、A. Kanda、M. Ogura (1.Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.、2.Kyoto Research Laboratory, Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1996.PC-3-1