[B-5-4] Sub-0.25 μm Devices and 16K SRAM with Selective-Epi Source/Drain on Ultra-Thin SOI

C. Raynaud、O. Faynot、JL. Pelloie、J. Margail、V. Ferlet、A. Quemeneur、R. Westhoff、McD. Robinson (1.LETI(CEA-Grenoble)、2.CEA Bruyeres le Chatel、3.LSRL)

https://doi.org/10.7567/SSDM.1997.B-5-4