Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Gap-Fill Oxide for Deep-Submicron CMOS Technologies

Seungho Lee; Kuchul Jung; Jeonghwan Son; Sungwoong Chung; Minchul Chae; Junyong Kim; Wouns Yang; Youngjong Lee; Jeongmo Hwang

doi:https://doi.org/10.7567/SSDM.1997.C-13-4

[C-13-4] Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Gap-Fill Oxide for Deep-Submicron CMOS Technologies

Seungho Lee、Kuchul Jung、Jeonghwan Son、Sungwoong Chung、Minchul Chae、Junyong Kim、Wouns Yang、Youngjong Lee、Jeongmo Hwang (1.Device Group, Process Group, Advanced Technology Lab., LG Semicon Co.)

https://doi.org/10.7567/SSDM.1997.C-13-4

1997 International Conference on Solid State Devices and Materials

[C-13-4] Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Gap-Fill Oxide for Deep-Submicron CMOS Technologies