[A-1-3] Improvement of Interface Properties of GeO₂/Ge MOS Structures Fabricated by Thermal Oxidation

T. Sasada¹、H. Matsubara¹、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2008.A-1-3