[A-2-3] Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric

C. Y. Kang¹、C. S. Park¹、H. K. Park¹、S. C. Song¹、R. Choi¹、B. H. Park²、B. Woo²、K. T. Lee³、J. Lee⁴、H. Hwang⁴、G. Bersuker¹、B. H. Lee¹、H. H. Tseng¹、R. Jammy⁵ (1.SEMATECH、2.Poongsan Microtech, USA、3.POSTECH、4.GIST, Korea、5.IBM Assignee, USA)

https://doi.org/10.7567/SSDM.2008.A-2-3