[A-2-4] V_t Variation Suppressed Al₂O₃-Capped HfO₂ Gate Dielectrics for Low V_t pMISFETs with High-k/Metal Gate Stacks

T. Morooka¹、T. Matsuki¹、N. Mise¹、S. Kamiyama¹、T. Nabatame¹、T. Eimori¹、Y. Nara¹、Y. Ohji¹ (1.Selete, Japan)

https://doi.org/10.7567/SSDM.2008.A-2-4