[G-2-5] Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET
T. Kanazawa1, H. Saito1, K. Wakabayashi1, Y. Miyamoto1, K. Furuya1
(1.Tokyo Tech., Japan)
https://doi.org/10.7567/SSDM.2008.G-2-5
