1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

S. Puget; G. Bossu; F. Berthollet; P. Mazoyer; J. M. Portal; P. Masson; R. Bouchakour; T. Skotnicki

doi:https://doi.org/10.7567/SSDM.2008.J-1-2

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-1-2] 1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

S. Puget^1,2, G. Bossu^1,2, F. Berthollet^1,3, P. Mazoyer¹, J. M. Portal², P. Masson⁴, R. Bouchakour², T. Skotnicki¹ (1.STMicroelectronics, 2.IM2NP, 3.INL-INSA Lyon, 4.LEAT, France)

https://doi.org/10.7567/SSDM.2008.J-1-2

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