Multi-Gate Metal Nano-crystal Memories with TiN Nano-crystals, High-k Blocking Dielectric and High Work Function Gate Electrode

C. P. Lu; C. K. Luo; B. Y. Tsui; C. H. Lin; P. J. Tzeng; C. C. Wang; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2008.J-5-3

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-5-3] Multi-Gate Metal Nano-crystal Memories with TiN Nano-crystals, High-k Blocking Dielectric and High Work Function Gate Electrode

C. P. Lu¹, C. K. Luo¹, B. Y. Tsui¹, C. H. Lin², P. J. Tzeng², C. C. Wang², M. J. Tsai² (1.National Chiao Tung Univ., 2.Industrial Tech. Res. Inst., Taiwan)

https://doi.org/10.7567/SSDM.2008.J-5-3

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