The Japan Society of Applied Physics

[P-3-25] Low-frequency Noise Characteristics of SiGe-channel PMOSFETs with High-compressive ILD-SiNx Stressing Layer

Y. T. Chen1、K. M. Chen2、W. S. Liao3、G. W. Huang2、F. S. Yeh1 (1.National Tsing Hua Univ.、2.National Nano Device Labs.、3.UMC, Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-25