[A-2-6] Experimental Study on I_g RTS Noise of SiON/HfO₂/TaN PMOSFETs

L. Zhang¹, R. Wang¹, J. Zhuge¹, R. Huang¹, T. Yu¹, P. Kirsch², H. H. Tseng², Y. Wang¹ (1.Peking Univ.(China), 2.SEMATECH(USA))

https://doi.org/10.7567/SSDM.2009.A-2-6