[G-3-3] Engineering of Si-rich Nitride Charge-Trapping Layer for Highly Reliable MONOS Type NAND Flash Memory with MLC Operation

R. Fujitsuka¹、K. Sekine¹、A. Sekihara¹、A. Fukumoto¹、J. Fujita¹、F. Aiso¹、Y. Ozawa¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.G-3-3