[I-4-2] Fabrication of InAs Nanowire Vertical Surrounding-Gate Field Effect Transistor on Si Substrates

T. Tanaka¹、K. Tomioka¹、J. Motohisa¹、S. Hara¹、T. Fukui¹ (1.Hokkaido Univ.)

https://doi.org/10.7567/SSDM.2009.I-4-2