[D-1-05] “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration

〇Takeru Kumabe¹、Yuto Ando²、Hirotaka Watanabe²、Atsushi Tanaka^2,3、Manato Deki^1,4、Shugo Nitta²、Yoshio Honda²、Hiroshi Amano^2,3,4,5 (1.Grad. Sch. Eng. Nagoya Univ.、2.IMaSS Nagoya Univ.、3.Natl. Inst. Mater. Sci.、4.VBL Nagoya Univ.、5.ARC Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 14:51 〜 14:58 |PDF ダウンロード

[D-1-06] Cellular-Automaton Study of Degeneracy Effects on the Mobility of HEMT’s

〇Koichi Fukuda¹、Junichi Hattori¹、Hidehiro Asai¹、Junya Yaita²、Junji Kotani² (1.AIST、2.Fujitsu Limited)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 14:58 〜 15:05 |PDF ダウンロード

[D-1-07] Proposal of stable operation of resonant tunneling diodes satisfying non-oscillation condition in terahertz frequency range

〇Safumi Suzuki¹ (1.Tokyo Tech)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 15:05 〜 15:12 |PDF ダウンロード

[D-1-08] Alpha-particle detectors with GaN PiN homoepitaxial layer

〇hironori okumura¹、Yohei Ogawara¹、Manabu Togawa²、Masaya Miyahara²、Jiro Nishinaga³、Masataka Imura⁴、Tadaaki Isobe⁵ (1.Univ. of Tsukuba、2.KEK、3.AIST、4.NIMS、5.RIKEN)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 15:12 〜 15:19 |PDF ダウンロード

[D-2-01 (Invited)] Performance Comparison of Scaled IGBTs and CIGBTs

〇Sankara Narayanan Ekkanath Madathil¹、Peng Luo¹、Wataru Saito²、Shinichi Nishizawa² (1.The University of Sheffield、2.Kyushu University)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 15:45 〜 16:15 |PDF ダウンロード

[D-2-02] Improvement of Qrr-IDSS and dynamic avalanche of field-plate MOSFETs by local lifetime control on the cathode side

〇Yusuke KOBAYASHI¹、Tatsuya Nishiwaki²、Akihiro Goryu^1,2、Tsuyoshi Kachi²、Ryohei Gejo²、Hiro Gangi¹、Tomoaki Inokuchi¹、Kazuto Takao¹ (1.Toshiba Corp.、2.Toshiba Electronic Devices & Storage Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:15 〜 16:22 |PDF ダウンロード

[D-2-03] Switching Loss Variation of SiC MOSFETs Owing to the Body Bias Effect

〇Takaaki Tominaga^1,2、Toshiaki Iwamatsu¹、Yukiyasu Nakao¹、Hiroyuki Amishiro¹、Hiroshi Watanabe¹、Shingo Tomohisa¹、Naruhisa Miura¹、Shuhei Nakata² (1.Mitsubishi Electric Corp.、2.Kanazawa Inst. of Tech.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:22 〜 16:29 |PDF ダウンロード

[D-2-04] Effect of k-means Clustering for Analysis of Power Cycle Test Waveforms on Failure Prediction

〇Ryosuke Okachi¹、Katsuhiro Kutsuki¹、Junya Muramatsu¹、Masataka Deguchi² (1.Toyota Central R&D Labs., Inc.、2.DENSO Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:29 〜 16:36 |PDF ダウンロード

[D-2-05] Experimental Validation of Thermal Couple Impedance Model for Accurate Die Temperature Estimation in Power Modules

〇Yohei Nakamura^1,3、Naotaka Kuroda¹、Ken Nakahara¹、Michihiro Shintani²、Takashi Sato³ (1.ROHM Co., Ltd.、2.Graduate School of Sci. and Tech., Nara Inst. of Sci. and Tech.、3.Graduate School of Informatics, Kyoto Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:36 〜 16:43 |PDF ダウンロード

[D-2-06] High Breakdown Voltage InGaAs/AlGaAs/InGaAs Superjunction Devices with Modulation-Doping for On-Resistance Reduction

Hiroaki Ogawa¹、〇Naotaka Iwata¹ (1.Toyota Technological Institute)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:43 〜 16:50 |PDF ダウンロード