2021 International Conference on Solid State Devices and Materials

Sep 6, 2021 - Sep 9, 2021

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382 results (141 - 150)

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[D-6-06] Mobility Reduction by Carbon Cluster Defects in SiC MOSFETS

〇John Robertson¹, Zhaofu Zhang¹, Yuzheng Guo² (1.Cambridge Univ., 2.Swansea Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:43 PM - 4:50 PM |PDF Download

[D-7-01 (Invited)] GaN-on-Si Power Device Platform: Epitaxy, Device, Reliability and Application

〇Roy King-Yuen Wong¹ (1.Innoscience Tech.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:00 AM - 9:30 AM |PDF Download

[D-7-02] A Novel ± 1.2 kV Bidirectional Blocking Si-GaN Monolithic Integrated Cascode FET

〇Guofang Yang¹, Jiaqi Zhang¹, Dazheng Chen¹, Jincheng Zhang¹, Chunfu Zhang¹, Yue Hao¹ (1.Xidian University, School of Microelectronics)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:30 AM - 9:37 AM |PDF Download

[D-7-03] Two-step mesa p-GaN gated anode diode for low-power rectification applications

〇Yuwei Zhang¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:37 AM - 9:44 AM |PDF Download

[D-7-04] Fixed Charge Generation in SiO₂/GaN MOS Structures by Forming Gas Annealing and its Suppression by Controlling Ga-oxide Interlayer Growth

〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:44 AM - 9:51 AM |PDF Download

[D-7-05] Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor

〇Takahiro Gotow¹, Tatsushi Suka¹, Yasuyuki Miyamoto¹ (1.Tokyo Institute of Technology)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:51 AM - 9:58 AM |PDF Download

[D-7-06] SiO₂/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method

〇Keito Aoshima¹, Noriyuki Taoka¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:58 AM - 10:05 AM |PDF Download

[D-7-07] Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching

〇Shinji Yamada¹, Takashi Ishida¹, Toshiyuki Nakamura², Ryuichiro Kamimura², Jun Suda¹, Tetsu Kachi¹ (1.Nagoya Univ., 2.ULVAC, Inc.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 10:05 AM - 10:12 AM |PDF Download

[D-7-08] High-breakdown-voltage Al_0.36Ga_0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts

〇Akiyoshi Inoue¹, Sakura Tanaka¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech. )

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 10:12 AM - 10:19 AM |PDF Download

[E-2-01 (Invited)] Programmable Silicon Photonics

〇Wim Bogaerts^1,2, Lukas Van Iseghem^1,2, Mi Wang^1,2, Hong Deng^1,2, Iman Zand^1,2, Xiangfeng Chen^1,2, K.P. Nagarjun^1,2, Umar Khan^1,2 (1.Ghent University - IMEC, 2.Center for Nano-and Biophotonics (NB - Photonics))

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 3:45 PM - 4:15 PM |PDF Download

382 results (141 - 150)

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